Dab tsi yog anti-static ballpoint cwj mem
1. Specifications: Push-type ESD ballpoint cwj mem
2. Lub substrate yog: superconducting graphene yas khoom nrog non-nto txheej ntxiv
3. Anti-static cwj mem lub cev thiab tus number case yog ruaj khov los tiv thaiv zoo li qub, tshwj xeeb los tiv thaiv zoo li tus number case, uas tsis yog-volatile anti-static, haum rau siv hauv purification Rhiav saum Chav Kawm 100.
4. cwj mem lub cev xim: dub
5. Refill xim: dub refill / xiav refill / liab refill
6. Nto tsis kam: Hengchuang ruaj khov los tiv thaiv zoo li qub 10E3-10E8 ohms (10 mus rau 3rd zog ntawm -10 mus rau 8 lub zog),
7. Kev sib txhuam hluav taws xob: Kev sib txhuam hluav taws xob tsawg dua 60V, lub sijhawm tawg zoo li qub: 1000V / 100V yog tsawg dua 1.0S.
8. Muaj cov cim daj ESD ntawm qhov chaw.
9. Cov txheej txheem ntim: 50 pcs / thawv
Anti-static ballpoint cwj mem nta: tsis tshua muaj nqi zoo li qub, kev sau ntawv du, dav siv nyob rau hauv qhov chaw zoo li qub, huv si kom tshem tawm cov hluav taws xob zoo li qub, kev ua haujlwm zoo li qub, tsis muaj plua plav rhiav cov ntaub ntawv khaws tseg, tsis muaj plua plav rhiav thauj cov txheej txheem ua haujlwm, ua haujlwm kev qhia phau ntawv elevator, kev lag luam Muaj ntau yam zoo xws li ruaj khov thiab ruaj khov electrostatic tus nqi. Nws tuaj yeem txo qhov kev puas tsuaj ntawm cov khoom siv hluav taws xob hauv cov txheej txheem tsim khoom, txo cov nqi, thiab txhim kho cov khoom zoo thiab cov txiaj ntsig;